Next-Gen High-Speed HBM LPDDR Memory Subsystem ASIC Digital Design Engineer

Qualcomm

Confirmed live today Trusted

Quick summary

Work type
On-site
Location
San Diego, CA
Salary
$145,600–$218,400 / yr
Posted
40 days ago
Freshness
Confirmed live today
Closes
Mar 16, 2027

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Salary context

Competitive pay

How this pay compares to similar roles

Similar $197k
This role $182k
$134k $257k
below market most similar roles pay here above market

This role pays less than 61% of similar roles. Most pay $167,137–$227,500 — the blue band above. At the midpoint, this role pays about $182k versus about $197k for comparable roles.

Based on 240 similar postings.

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About Qualcomm

Qualcomm is a leading American semiconductor and telecommunications company based in San Diego, CA.

Qualcomm currently has 575 open roles on FindRole.

Listed pay typically runs $147,900–$221,900 across 550 roles with salary data.

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At a glance

TL;DR · Next-Gen High-Speed HBM LPDDR Memory Subsystem ASIC Digital Design Engineer

Next-Gen, High-Speed HBM, LPDDR Memory Subsystem ASIC Digital Design Engineer The Senior ASIC Design Engineer joins the Next Generation, High-Speed, Memory and Cache Controller and Advanced Memory NoCs based Subsystem Design Team. This role involves the architecture, RTL coding, and deployment of high-speed memory subsystems into products. Key responsibilities include developing architecture specifications, driving micro-architecture for logic design, implementing RTL, and performing synthesis, timing closure, physical design support, gate level simulations, and power analysis. The engineer must debug designs and provide integration support for components interfacing with CPUs, GPUs, DSPs, and multimedia processors. Required skills include ASIC design, RTL coding, and hardware architecture experience. Technical domain context includes LPDDR memory, cache controllers, NoC-based architectures, HBM memory types, on-chip SRAM, L3 cache controllers, and x86 or ARM CPU/bus architectures.

What you'll do

  • Develop architecture and design specifications for next-generation high-speed memory subsystems.
  • Drive the micro-architecture for specific portions of the logic design.
  • Implement and deliver high-quality RTL code for memory controllers and NoCs.
  • Debug designs and provide technical support when integrated into the rest of the chip.
  • Perform synthesis, timing closure, and physical design support tasks.
  • Conduct gate level simulations and power analysis for high-speed designs.
  • Contribute to improvements in design methodology to increase productivity and quality.

What we're looking for

  • Bachelor's degree in Science, Engineering, or related field.
  • Master's degree in Computer Engineering or Electrical Engineering (preferred).
  • 5+ years of ASIC design, RTL coding, and front-end digital design experience.
  • 3+ years of Hardware Architecture experience.
  • 4+ years of ASIC design, verification, validation, or integration experience with a Bachelor's degree (or 3+ years with a Master's).
  • Experience with LPDDR memory, cache controllers, and NoC based architectures (preferred).
  • Experience with x86 or ARM CPU/bus architectures (preferred).
  • Exposure to HBM memory type designs (preferred).

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