CPU SRAM Design Engineer

Qualcomm

Actively hiring Posted this week Verified listing
Austin, TX Posted 2 days ago Apply by Nov 29, 2026 $122,500$183,700 / year

Market check

Salary context

Below market

How this pay compares to similar roles

Similar $194k
This role $153k
$108k most similar roles pay here $256k

This role pays less than 79% of similar roles. Most pay $165,237–$223,700 — the shaded band above. At the midpoint, this role pays about $153k versus about $194k for comparable roles.

Based on 240 similar postings.

Employer

About Qualcomm

Qualcomm is a leading American semiconductor and telecommunications company based in San Diego, CA.

Qualcomm currently has 615 open roles on FindRole.

Listed pay typically runs $148,300–$222,500 across 556 roles with salary data.

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At a glance

TL;DR

Join Qualcomm’s high-performance CPU team as a Memory Designer where you will take full ownership of custom SRAM and Register File designs from schematic capture to analysis and model generation. This role involves developing digital circuits for high-speed and low-power SRAMs, including layout planning, functional verification, simulation, and timing characterization. You will work with industry-standard tools like NanoTime, Ansys EMIR analysis, ESP-CV, and Liberate power analysis to ensure efficient model generation while collaborating closely with CAD and Physical Design teams to resolve memory performance challenges. Ideal candidates have a strong background in SRAM design, semiconductor device fundamentals, and variation-aware simulation in advanced technology nodes such as FinFET and Nanosheet.

What you'll do

  • Design custom digital circuits for high-speed and low-power SRAM designs.
  • Capture schematics and plan layouts for memory components.
  • Conduct functional verification and simulation of memory circuits.
  • Characterize timing and perform analysis to generate collateral models.
  • Collaborate with CAD team to ensure efficient model generation processes.
  • Resolve physical design challenges related to memory performance, power, and area.

What we're looking for

  • Bachelor’s degree in Electrical Engineering with 5+ years of practical experience.
  • Experience designing SRAM circuits and using industry-standard custom design tools.
  • Proficiency in circuit simulation, Monte Carlo analysis, and static timing analysis.
  • Strong knowledge of high-performance and low-power design techniques for SRAM and Register Files.
  • Familiarity with variation-aware simulation in FinFet and Nanosheet technology nodes.
  • Experience with memory logical models, BIST features, and functional verification.

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